1999, Vol 7, Num 6, pp 463-469 ref : 16 ref ISSN 1062-7995 Scientific domain Energy Publisher Wiley, London Publication country United Kingdom Document type Article Language English Keyword (fr) Addition bore Addition gallium Cellule solaire Conversion photovoltaïque Dopage Eclairement Fabrication Méthode Czochralski Méthode phase fondue Propriété électrique Semiconducteur type p Silicium Stabilité Si Keyword (en) Boron addition Gallium addition Solar cell Photovoltaic conversion Doping Illumination Manufacturing Czochralski method Growth from melt Electrical properties p type semiconductor Silicon Stability Keyword (es) Adición boro Adición galio Célula solar Conversión fotovoltaica Doping Alumbrado Fabricación Método Czochralski Método fase fundida Propiedad eléctrica Semiconductor tipo p Silicio Estabilidad Classification Pascal 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. ![]() SEH Isobe R&D Center, Shin-Etsu Handotai Co., 2-13-1 Isobe, Annaka, Gunma 379-0196, Japan Source W 1 REIN, S 1 KNOBLOCH, J 1 WETTLING, W 1 ABE, T 2įraunhofer Institute for Solar Energy Systems, Oltmannsstr. 239000000758 substrate Substances 0.CopyPermanent link Copy Comparison of boron- and gallium-doped p- type Czochralski silicon for photovoltaic application Author GLUNZ, S.238000004519 manufacturing process Methods 0.000 title claims abstract description 27.229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 33.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to NL1030200 priority Critical Priority to NL1030200A priority patent/NL1030200C2/nl Application filed by Energieonderzoek Centrum Nederland ECN filed Critical Energieonderzoek Centrum Nederland ECN Priority to PCT/NL2006/050242 priority patent/WO2007043881A1/en Application granted granted Critical Publication of ES2378082T3 publication Critical patent/ES2378082T3/es Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links Original Assignee Energieonderzoek Centrum Nederland ECN Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Inventor Yuji Komatsu Hanno Dietrich Goldbach Rudolf Emmanuel Isidore Schropp Lambert Johan Geerligs Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number ES06799532T Other languages English ( en) Google Patents Método de fabricación de células solares de silicio multicristalino tipo nĭownload PDF Info Publication number ES2378082T3 ES2378082T3 ES06799532T ES06799532T ES2378082T3 ES 2378082 T3 ES2378082 T3 ES 2378082T3 ES 06799532 T ES06799532 T ES 06799532T ES 06799532 T ES06799532 T ES 06799532T ES 2378082 T3 ES2378082 T3 ES 2378082T3 Authority ES Spain Prior art keywords substrate type diffusion layer dielectric film anterior side Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. ![]() Google Patents ES2378082T3 - Método de fabricación de células solares de silicio multicristalino tipo n ES2378082T3 - Método de fabricación de células solares de silicio multicristalino tipo n
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